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| SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4539ADY Transistors IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.7 2 1.3 0.9 1.1 0.7 -55 to 150 Symbol VDS VGS ID 5.9 4.7 N-Channel 10 secs Steady State 30 20 4.4 3.6 30 -1.7 2 1.3 -0.9 1.1 0.7 -4.9 -3.9 P-Channel 10 secs Steady State -30 20 -3.7 -2.9 V V A A A A W W Unit Absolute Maximum Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient * Maximum Junction-to-Foot(Drain) RthJA RthJF 50 90 40 Max 62.5 110 40 P-Channel Typ 52 90 32 Max 62.5 110 40 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI4539ADY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 24V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 VDS = -24V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -15 V, VGS = -10 V, ID = -4.9A P-Ch N-Ch P-Ch N-Ch P-Ch N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -15 V, RL = 15 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF = 1.7 A, di/dt = 100 A/ IF = -1.7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.5 5 30 -30 Min 1 -1 Transistors IC Typ Max Unit V 100 100 1 -1 5 -5 A A 0.032 0.036 0.043 0.053 0.042 0.053 0.075 0.090 15 9 0.80 -0.80 13 15 2.3 4 2 2.0 2.2 12.6 6 7 14 10 30 40 5 20 30 30 12 15 25 20 60 80 10 40 60 60 ns 1.2 -1.2 20 25 nC S V nA VGS = 10 V, ID = 5.9A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -4.9A VGS = 4.5 V, ID = 4.9A VGS = -4.5 V, ID = -3.7A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Gate Resistance Turn On Time Rise Time gfs VSD Qg Qgs Qgd Rg td(on) tr VDS = 15 V, ID = 5.9A VDS = -15 V, ID = -4.9A IS = 1.7A, VGS = 0 V IS = -1.7A, VGS = 0 V N-Channel VDS = 15 V, VGS = 10V, ID = 5.9A Turn Off Delay Time td( off) 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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